Traditionally, Computer Aided Design (CAD) tools have been used to create the nominal design of an integrated circuit (IC), such that the circuit nominal response meets the desired performance specifications. In reality, however, due to the disturbances ofthe IC manufacturing process, the actual performancesof the mass produced chips are different than those for the nominal design. Even if the manufacturing process were tightly controlled, so that there were little variations across the chips manufactured, the environmentalchanges (e. g. those oftemperature, supply voltages, etc. ) would alsomakethe circuit performances vary during the circuit life span. Process-related performance variations may lead to low manufacturing yield, and unacceptable product quality. For these reasons, statistical circuit design techniques are required to design the circuit parameters, taking the statistical process variations into account. This book deals with some theoretical and practical aspects of IC statistical design, and emphasizes how they differ from those for discrete circuits. It de scribes a spectrum of different statistical design problems, such as parametric yield optimization, generalized on-target design, variability minimization, per formance tunning, and worst-case design. The main emphasis of the presen tation is placed on the principles and practical solutions for performance vari ability minimization. It is hoped that the book may serve as an introductory reference material for various groups of IC designers, and the methodologies described will help them enhance the circuit quality and manufacturability. The book containsseven chapters."

This book covers the theoretical background, experimental methods and implementation details to engineer for communication and imaging application, terahertz devices using metamaterials, in mainstream semiconductor foundry processes. This book will provide engineers and physicists an authoritative reference to construct such devices with minimal background. The authors describe the design and construction of electromagnetic (EM) devices for terahertz frequencies (108-1010 cycles/sec) using artificial materials that are a fraction of the wavelength of the incident EM wave, resulting in an effective electric and magnetic properties (permittivity and permeability) that are unavailable in natural materials.

Recent years have seen silicon integrated circuits enter into an increasing number of technical and consumer applications, until they now affect everyday life, as well as technical areas. Polycrystalline silicon has been an important component of silicon technology for nearly two decades, being used first in MOS integrated circuits and now becoming pervasive in bipolar circuits, as well. During this time a great deal of informa tion has been published about polysilicon. A wide range of deposition conditions has been used to form films exhibiting markedly different properties. Seemingly contradictory results can often be explained by considering the details of the structure formed. This monograph is an attempt to synthesize much of the available knowledge about polysilicon. It represents an effort to interrelate the deposition, properties, and applications of polysilicon so that it can be used most effectively to enhance device and integrated-circuit perfor mance. As device performance improves, however, some of the proper ties of polysilicon are beginning to restrict the overall performance of integrated circuits, and the basic limitations of the properties of polysili con also need to be better understood to minimize potential degradation of circuit behavior."

Low-Grade Thermal Energy Harvesting: Advances in Thermoelectrics, Materials, and Emerging Applications provides readers with fundamental and key concepts surrounding low-grade thermal energy conversion while also reviewing the latest research directions. The book covers the most promising and emerging technologies for low-grade heat recovery, harvesting and conversion, including wearable thermoelectrics and organic thermoelectrics. Each chapter includes key materials, principles, design and fabrication strategies for low-grade heat recovery. Special attention on emerging materials such as organic composites, 2D materials and nanomaterials are also included. The book emphasizes materials and device structures that enable the powering of wearable electronics and consumer electronics. The book is suitable for materials scientists and engineers in academia and R&D in manufacturing, industry, energy and electronics.

The book presents the modeling and control of hydrogen-air PEM fuel cells, including simultaneous estimation of the parameters and states, fuzzy cluster modeling, SPM-based predictive control and advanced fuzzy control. MATLAB/Simulink-based modeling and control programs are discussed in detail. With simulations and experiments, it is an essential reference for both scientists and industrial engineers.

The Physical Electronics Department of SRI International (formerly Stanford Research Institute) has been pioneering the development of devices fabricated to submicron tolerances for well over 20 years. In 1961, a landmark paper on electron-beam lithography and its associated technologies was published by K. R. Shoulderst (then at SRI), which set the stage for our subsequent efforts in this field. He had the foresight to believe that the building of such small devices was actually within the range of human capabilities. As a result of this initial momentum, our experience in the technologies associated with microfabrication has become remarkably comprehensive, despite the relatively small size of our research activity. We have frequently been asked to deliver seminars or provide reviews on various aspects of micro fabrication. These activities made us aware of the need for a comprehensive overview of the physics of microfabrication. We hope that this book will fill that need."

This book analyses different A/D-converter architectures with an emphasis on the maximum achievable power efficiency. It also provides an accessible overview of the state-of-the art in calibration techniques for Nyquist A/D converters. The calibration techniques presented are applicable to other analog-to-digital systems, such as those applied in integrated receivers. They allow implementation without introducing a speed or power penalty.

How do you protect electrical systems from high energy electromagnetic pulses? This book completes the overview of systems and practices against EMPs from high altitude sources started with the previous "Protecting Electrical Equipment - Good Practices for preventing high altitude electromagnetic pulse impacts", including practical protection methods and means for evaluating their effectiveness.

Semiconductor materials have been studied intensively since the birth of silicon technology more than 50 years ago. The ability to physically and chemically t- lor their properties with precision is the key factor responsible for the electronic revolution in our society over the past few decades. Semiconductor material s- tems (like silicon and GaAs-related materials) have now matured and found well established applications in electronics, optoelectronics, and several other ?elds. Other materials such as III-Nitrides were developed later, in response to needs that the above mentioned semiconductors were unable to ful?ll. The properties of I- nitrides (AlN, GaN InN, and related alloy systems) make them an excellent choice for ef?cient light emitters in the visible as well as the UV region, UV detectors, and for a variety of electronic device such as high frequency unipolar power devices. There was a major upsurgein the research of the GaN material system around1970.

This book describes the characterization of liquid crystal materials at microwave frequencies and the usage of these materials in reconfigurable planar antennas and in their electrical tunable components. It reports for the first time the realization of a two-dimensional electronic beam steering antenna and polarization agile planar antennas with liquid crystal display technology. It gives a detailed description of all the theoretical analyses, modeling and design methods that were involved in the realization of these devices as well as their validation using measurement of demonstrative prototypes. This book also shows that low profile, low cost, high gain, electronic beam steering and polarization agile antennas can be fabricated in larger sizes by using existing automated liquid crystal display manufacturing techniques. The innovative ideas and method described in this work represent a considerable advancement in the field of electronically reconfigurable antennas based on liquid crystal technology and are expected to draw significant interest in the future. Such antennas may become important, for example, in mobile terminals integrated into the body of laptops (in the cover) or of automobiles (in the rooftop), ships or boats, for which flat, low-profile and low-cost antennas are required.

Silicon on Insulator is more than a technology, more than a job, and more than a venture in microelectronics; it is something different and refreshing in device physics. This book recalls the activity and enthu siasm of our SOl groups. Many contributing students have since then disappeared from the SOl horizon. Some of them believed that SOl was the great love of their scientific lives; others just considered SOl as a fantastic LEGO game for adults. We thank them all for kindly letting us imagine that we were guiding them. This book was very necessary to many people. SOl engineers will certainly be happy: indeed, if the performance of their SOl components is not always outstanding, they can now safely incriminate the relations given in the book rather than their process. Martine, Gunter, and Y. S. Chang can contemplate at last the amount of work they did with the figures. Our SOl accomplices already know how much we borrowed from their expertise and would find it indecent to have their detailed contri butions listed. Jean-Pierre and Dimitris incited the book, while sharing their experience in the reliability of floating bodies. Our families and friends now realize the SOl capability of dielectrically isolating us for about two years in a BOX. Our kids encouraged us to start writing. Our wives definitely gave us the courage to stop writing. They had a hard time fighting the symptoms of a rapidly developing SOl allergy."

Testing techniques for VLSI circuits are undergoing many exciting changes. The predominant method for testing digital circuits consists of applying a set of input stimuli to the IC and monitoring the logic levels at primary outputs. If, for one or more inputs, there is a discrepancy between the observed output and the expected output then the IC is declared to be defective. A new approach to testing digital circuits, which has come to be known as IDDQ testing, has been actively researched for the last fifteen years. In IDDQ testing, the steady state supply current, rather than the logic levels at the primary outputs, is monitored. Years of research suggests that IDDQ testing can significantly improve the quality and reliability of fabricated circuits. This has prompted many semiconductor manufacturers to adopt this testing technique, among them Philips Semiconductors, Ford Microelectronics, Intel, Texas Instruments, LSI Logic, Hewlett-Packard, SUN microsystems, Alcatel, and SGS Thomson. This increase in the use of IDDQ testing should be of interest to three groups of individuals associated with the IC business: Product Managers and Test Engineers, CAD Tool Vendors and Circuit Designers. Introduction to IDDQ Testing is designed to educate this community. The authors have summarized in one volume the main findings of more than fifteen years of research in this area.

Summarizes current recycling processes, challenges, and perspectives. Offers a comprehensive review of current commercialized LIB recycling companies. Showcases an innovative closed-loop hydrometallurgical recycling process to recycle lithium cathode materials. Provides detailed modelling and economic analysis of several hydrometallurgical recycling processes. Features practical cases and data developed by the authors.

The tremendous impact of electronic devices on our lives is the result of continuous improvements of the billions of nanoelectronic components inside integrated circuits (ICs). However, ultra-scaled semiconductor devices require nanometer control of the many parameters essential for their fabrication. Through the years, this created a strong alliance between microscopy techniques and IC manufacturing. This book reviews the latest progress in IC devices, with emphasis on the impact of electrical atomic force microscopy (AFM) techniques for their development. The operation principles of many techniques are introduced, and the associated metrology challenges described. Blending the expertise of industrial specialists and academic researchers, the chapters are dedicated to various AFM methods and their impact on the development of emerging nanoelectronic devices. The goal is to introduce the major electrical AFM methods, following the journey that has seen our lives changed by the advent of ubiquitous nanoelectronics devices, and has extended our capability to sense matter on a scale previously inaccessible.

The last decade has witnessed the discovery of, and dramatic progress in understanding the physics of graphene and related two-dimensional materials. The development of methods for manufacturing and aligning high-quality two-dimensional crystals has facilitated the creation of a new generation of materials: the heterostructures of graphene with hexagonal crystals, in which the graphene electrons acquire new, qualitatively different properties. This thesis provides a comprehensive theoretical framework in which to understand these heterostructures, based on the tight binding model, perturbation theory, group theory and the concept of the moire superlattice (all of which are elucidated). It explains how graphene heterostructures provide new opportunities for tailoring band structure, such as creating additional Dirac points or opening band gaps and how they manifest themselves in transport measurements, optical absorption spectra and the fractal Hofstadter spectra. Also considered are the heterostructures of bilayer graphene and resonant tunneling in aligned graphene/insulator/graphene devices.

Nowadays information technology is based on semiconductor and ferromagnetic materials. Information processing and computation are based on electron charge in semiconductor transistors and integrated circuits, and information is stored on magnetic high-density hard disks based on the physics of the electron spins. Recently, a new branch of physics and nanotechnology, called magneto-electronics, spintronics, or spin electronics, has emerged, which aims at simultaneously exploiting both the charge and the spin of electrons in the same device. A broader goal is to develop new functionality that does not exist separately in a ferromagnet or a semiconductor. The aim of this book is to present new directions in the development of spin electronics in both the basic physics and the technology which will become the foundation of future electronics.

Microcontrollers exist in a wide variety of models with varying structures and numerous application opportunities. Despite this diversity, it is possible to find consistencies in the architecture of most microcontrollers. Microcontrollers: Fundamentals and Applications with PIC focuses on these common elements to describe the fundamentals of microcontroller design and programming. Using clear, concise language and a top-bottom approach, the book describes the parts that make up a microcontroller, how they work, and how they interact with each other. It also explains how to program medium-end PICs using assembler language. Examines analog as well as digital signals This volume describes the structure and resources of general microcontrollers as well as PIC microcontrollers, with a special focus on medium-end devices. The authors discuss memory organization and structure, and the assembler language used for programming medium-end PIC microcontrollers. They also explore how microcontrollers can acquire, process, and generate digital signals, explaining available techniques to deal with parallel input or output, peripherals, resources for real-time use, interrupts, and the specific characteristics of serial data interfaces in PIC microcontrollers. Finally, the book describes the acquisition and generation of analog signals either using resources inside the chip or by connecting peripheral circuits. Provides hands-on clarification Using practical examples and applications to supplement each topic, this volume provides the tools to thoroughly grasp the architecture and programming of microcontrollers. It avoids overly specific details so readers are quickly led toward design implementation. After mastering the material in this text, they will understand how to efficiently use PIC microcontrollers in a design process.

The Verilog Hardware Description Language was first introduced in 1984. Over the 20 year history of Verilog, every Verilog engineer has developed his own personal "bag of tricks" for coding with Verilog. These tricks enable modeling or verifying designs more easily and more accurately. Developing this bag of tricks is often based on years of trial and error. Through experience, engineers learn that one specific coding style works best in some circumstances, while in another situation, a different coding style is best. As with any high-level language, Verilog often provides engineers several ways to accomplish a specific task. Wouldn't it be wonderful if an engineer first learning Verilog could start with another engineer's bag of tricks, without having to go through years of trial and error to decide which style is best for which circumstance? That is where this book becomes an invaluable resource. The book presents dozens of Verilog tricks of the trade on how to best use the Verilog HDL for modeling designs at various level of abstraction, and for writing test benches to verify designs. The book not only shows the correct ways of using Verilog for different situations, it also presents alternate styles, and discusses the pros and cons of these styles.

5. 2. Distinction between thick- and thin-film devices . . . . . . . . . . . . . . . . . . . . 109 5. 3. I-V Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112 5. 3. 1. Threshold voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2 5. 3 . 2. Body effecL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1 8 5. 3. 3. Short-channel effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120 5. 3. 4. Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 24 5. 4. Transconductance and mobility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129 5. 4. 1 Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129 5. 4. 2. Mobility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130 5. 5. Subthreshold slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132 5. 6. Impact ionization and high-field effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 9 5. 6. 1. Kink effecL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 39 5. 6. 2. Hot-electron degradation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143 5. 7. Parasitic bipolar effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145 5. 7. 1. Anomalous subthreshold slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 45 5. 7. 2. Reduced drain breakdown voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 7 5. 8. Accumulation-mode p-channel MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 9 CHAPTER 6 - Other SOl Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 5 9 6. 1. Non-conventional devices adapted from bulk . . . . . . . . . . . . . . . . . . . . . . . . . . . 159 6. 1. 1. COMFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160 6. 1. 2. High-voltage lateral MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 6 1 6. 1. 3. PIN photodiode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162 6. 1. 4. JFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163 6. 2. Novel SOl devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164 6. 2. 1. Lubistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164 6. 2. 2. Bipolar-MOS device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166 6. 2. 3. Double-gate MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 69 6. 2. 4. Bipolar transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 172 6. 2. 5. Optical modulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 74 CHAPTER 7 - The sm MOSFET Operating in a Harsh Environment. . . . . . . . 1 77 7. 1. Radiation environment. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 7 7 7. 1. 1. SEU . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 178 7. 1. 2. Total dose . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180 7. 1. 3. Dose-rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 8 4 7. 2. High-temperature operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 85 7. 2. 1. Leakage currents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

"Fundamentals of Nanoscaled Field Effect Transistors" gives comprehensive coverage of thefundamental physical principles and theory behind nanoscale transistors.The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high- technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.

Until the 1990s, the reduction of the minimum feature sizes used to fabricate in- grated circuits, called "scaling," has highlighted serious advantages as integration density, speed, power consumption, functionality and cost. Direct consequence was the decrease of cost-per-function, so the electronic productivity has largely progressed in this period. Another usually cited trend is the evolution of the in- gration density as expressed by the well-know Moore's Law in 1975: the number of devices per chip doubles every 2 years. This evolution has allowed improving signi?cantly the circuit complexity, offering a great computing power in the case of microprocessor, for example. However, since few years, signi?cant issues appeared such as the increase of the circuit heating, device complexity, variability and dif?culties to improve the integration density. These new trends generate an important growth in development and production costs. Though is it, since 40 years, the evolution of the microelectronics always f- lowed the Moore's law and each dif?culty has found a solution.

This text focuses on techniques for minimizing power dissipation during test application at logic and register-transfer levels of abstraction of the VLSI design flow. It surveys existing techniques and presents several test automation techniques for reducing power in scan-based sequential circuits and BIST data paths.

Electronic structure and physical properties of strongly correlated materials containing elements with partially filled 3d, 4d, 4f and 5f electronic shells is analyzed by Dynamical Mean-Field Theory (DMFT). DMFT is the most universal and effective tool used for the theoretical investigation of electronic states with strong correlation effects. In the present book the basics of the method are given and its application to various material classes is shown. The book is aimed at a broad readership: theoretical physicists and experimentalists studying strongly correlated systems. It also serves as a handbook for students and all those who want to be acquainted with fast developing filed of condensed matter physics.

The goal of putting systems on a chip' has been a difficult challenge that is only recently being met. Since the world is analog', putting systems on a chip requires putting analog interfaces on the same chip as digital processing functions. Since some processing functions are accomplished more efficiently in analog circuitry, chips with a large amount of analog and digital circuitry are being designed. Whether a small amount of analog circuitry is combined with varying amounts of digital circuitry or the other way around, the problem encountered in marrying analog and digital circuitry are the same but with different scope. Some of the most prevalent problems are chip/package capacitive and inductive coupling, ringing on the RLC tuned circuits that form the chip/package power supply rails and off-chip drivers and receivers, coupling between circuits through the chip substrate bulk, and radiated emissions from the chip/package interconnects. To aggravate the problems of designers who have to deal with the complexity of mixed-signal coupling there is a lack of verification techniques to simulate the problem. In addition to considering RLC models for the various chip/package/board level parasitics, mixed-signal circuit designers must also model coupling through the common substrate when simulating ICs to obtain an accurate estimate of coupled noise in their designs. Unfortunately, accurate simulation of substrate coupling has only recently begun to receive attention, and techniques for the same are not widely known. Simulation Techniques and Solutions for Mixed-Signal Coupling in Integrated Circuits addresses two major issues of the mixed-signal coupling problem -- how to simulate it and how to overcome it. It identifies some of the problems that will be encountered, gives examples of actual hardware experiences, offers simulation techniques, and suggests possible solutions. Readers of this book should come away with a clear directive to simulate their design for interactions prior to building the design, versus a build it and see' mentality.