This edited book designs the Cognitive Computing in Human Cognition to analyze to improve the efficiency of decision making by cognitive intelligence. The book is also intended to attract the audience who work in brain computing, deep learning, transportation, and solar cell energy. Due to this in the recent era, smart methods with human touch called as human cognition is adopted by many researchers in the field of information technology with the Cognitive Computing.

This book presents synthesis techniques for the preparation of low-dimensional nanomaterials including 0D (quantum dots), 1D (nanowires, nanotubes) and 2D (thin films, few layers), as well as their potential applications in nanoelectronic systems. It focuses on the size effects involved in the transition from bulk materials to nanomaterials; the electronic properties of nanoscale devices; and different classes of nanomaterials from microelectronics to nanoelectronics, to molecular electronics. Furthermore, it demonstrates the structural stability, physical, chemical, magnetic, optical, electrical, thermal, electronic and mechanical properties of the nanomaterials. Subsequent chapters address their characterization, fabrication techniques from lab-scale to mass production, and functionality. In turn, the book considers the environmental impact of nanotechnology and novel applications in the mechanical industries, energy harvesting, clean energy, manufacturing materials, electronics, transistors, health and medical therapy. In closing, it addresses the combination of biological systems with nanoelectronics and highlights examples of nanoelectronic-cell interfaces and other advanced medical applications. The book answers the following questions: * What is different at the nanoscale? * What is new about nanoscience? * What are nanomaterials (NMs)? * What are the fundamental issues in nanomaterials? * Where are nanomaterials found? * What nanomaterials exist in nature? * What is the importance of NMs in our lives? * Why so much interest in nanomaterials? * What is at nanoscale in nanomaterials? * What is graphene? * Are pure low-dimensional systems interesting and worth pursuing? * Are nanotechnology products currently available? * What are sensors? * How can Artificial Intelligence (AI) and nanotechnology work together? * What are the recent advances in nanoelectronic materials? * What are the latest applications of NMs?

This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory. This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Provides an overview of non-volatile memory fundamentals. Broadens readers' understanding of future trends in non-volatile memories.

Metamaterials artificially structured materials with engineered electromagnetic properties have enabled unprecedented flexibility in manipulating electromagnetic waves and producing new functionalities. This book details recent advances in the study of optical metamaterials, ranging from fundamental aspects to up-to-date implementations, in one unified treatment. Important recent developments and applications such as superlens and cloaking devices are also treated in detail and made understandable. The planned monograph can serve as a very timely book for both newcomers and advanced researchers in this extremely rapid evolving field."

The principal aim of this NATO Advanced Study Institute (ASI) "Nanostructured and Advanced Materials for Applications in Sensor, Optoelectronic and Photovoltaic Technology" was to present a contemporary overview of the field of nanostructured and advanced electronic materials. Nanotechnology is an emerging scientific field receiving significant worldwide attention. On a nanometer scale, materials or structures may possess new and unique physical properties. Some of these are now known to the scientific community, but there may well be many properties not yet known to us, rendering it as a fascinating area of research and a suitable subject for a NATO ASI. Yet another aspect of the field is the possibility for creating meta-stable phases with unconventional properties and the ultra-miniaturization of current devices, sensors, and machines. Such nanotechnological and related advanced materials have an extremely wide range of potential applications, viz. nanoscale electronics, sensors, optoelectronics, photonics, nano-biological systems, na- medicine, energy storage systems, etc. This is a wide-ranging subject area and therefore requires the formation of multi-disciplinary teams of physicists, chemists, materials scientists, engineers, molecular biologists, pharmacologists, and others to work together on the synthesis and processing of materials and structures, the understanding of their physical properties, the design and fabrication of devices, etc. Hence, in formulating our ASI, we adopted an int- disciplinary approach, bringing together recognised experts in the various fields while retaining a level of treatment accessible to those active in specific individual areas of research and development.

The motion of electrons in superconductors seems to exceed our imagination based on daily experience with Newtonian mechanics. This book shows that the classical concepts, such as the balance of forces acting on electrons, are useful for understanding superconductivity. The electrostatic field plays a natural part in this balance as it mediates forces between electrons at long distances.

This monograph solely investigates the Debye Screening Length (DSL) in semiconductors and their nano-structures. The materials considered are quantized structures of non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V and Bismuth Telluride respectively. The DSL in opto-electronic materials and their quantum confined counterparts is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestions for the experimental determination of 2D and 3D DSL and the importance of measurement of band gap in optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring photon induced physical properties) have also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the DSL and the DSL in heavily doped semiconductors and their nanostructures has been investigated. This monograph contains 150 open research problems which form the integral part of the text and are useful for both PhD students and researchers in the fields of solid-state sciences, materials science, nano-science and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures.

This book presents fabrication approaches that could be adapted for the high-throughput and low-cost manufacturing of the proposed transparent electrode. It proposes and demonstrates a new type of embedded metal-mesh transparent electrode (EMTE) that offers superior electrical, optical, and mechanical properties. The structure of the EMTE allows thick metal mesh to be used (for high conductivity) without sacrificing surface smoothness. In addition, the embedded structure improves the EMTE's mechanical stability under high bending stress, as well as its chemical stability in ambient environments. These design aspects are then shown to be suitable for larger electrode areas, narrower metal-mesh line widths, and a wide range of materials, and can easily be adapted to produce flexible and even stretchable devices. In closing, the book explores the practical applications of EMTEs in flexible bifacial dye-sensitized solar cells and transparent thin-film heaters, demonstrating their outstanding performance.

This volume comprises the expert contributions from the invited speakers at the 17th International Conference on Thin Films (ICTF 2017), held at CSIR-NPL, New Delhi, India. Thin film research has become increasingly important over the last few decades owing to the applications in latest technologies and devices. The book focuses on current advances in thin film deposition processes and characterization including thin film measurements. The chapters cover different types of thin films like metal, dielectric, organic and inorganic, and their diverse applications across transistors, resistors, capacitors, memory elements for computers, optical filters and mirrors, sensors, solar cells, LED's, transparent conducting coatings for liquid crystal display, printed circuit board, and automobile headlamp covers. This book can be a useful reference for students, researchers as well as industry professionals by providing an up-to-date knowledge on thin films and coatings.

BiCMOS Technology and Applications, Second Edition provides a synthesis of available knowledge about the combination of bipolar and MOS transistors in a common integrated circuit - BiCMOS. In this new edition all chapters have been updated and completely new chapters on emerging topics have been added. In addition, BiCMOS Technology and Applications, Second Edition provides the reader with a knowledge of either CMOS or Bipolar technology/design a reference with which they can make educated decisions regarding the viability of BiCMOS in their own application. BiCMOS Technology and Applications, Second Edition is vital reading for practicing integrated circuit engineers as well as technical managers trying to evaluate business issues related to BiCMOS. As a textbook, this book is also appropriate at the graduate level for a special topics course in BiCMOS. A general knowledge in device physics, processing and circuit design is assumed. Given the division of the book, it lends itself well to a two-part course; one on technology and one on design. This will provide advanced students with a good understanding of tradeoffs between bipolar and MOS devices and circuits.

Explains the circuit design of silicon optoelectronic integrated circuits (OEICs), which are central to advances in wireless and wired telecommunications. The essential features of optical absorption are summarized, as is the device physics of photodetectors and their integration in modern bipolar, CMOS, and BiCMOS technologies. This information provides the basis for understanding the underlying mechanisms of the OEICs described in the main part of the book. In order to cover the topic comprehensively, Silicon Optoelectronic Integrated Circuits presents detailed descriptions of many OEICs for a wide variety of applications from various optical sensors, smart sensors, 3D-cameras, and optical storage systems (DVD) to fiber receivers in deep-sub-m CMOS. Numerous detailed illustrations help to elucidate the material.

The application of quantitative reliability evaluation in electric power sys tems has now evolved to the point at which most utilities use these techniques in one or more areas of their planning, design, and operation. Most of the techniques in use are based on analytical models and resulting analytical evaluation procedures. Improvements in and availability of high-speed digi tal computers have created the opportunity to analyze many of these prob lems using stochastic simulation methods and over the last decade there has been increased interest in and use made of Monte Carlo simulation in quantitative power system reliability assessment. Monte Carlo simulation is not a new concept and recorded applications have existed for at least 50 yr. However, localized high-speed computers with large-capacity storage have made Monte Carlo simulation an available and sometimes preferable option for many power system reliability applications. Monte Carlo simulation is also an integral part of a modern undergrad uate or graduate course on reliability evaluation of general engineering systems or specialized areas such as electric power systems. It is hoped that this textbook will help formalize the many existing applications of Monte Carlo simulation and assist in their integration in teaching programs. This book presents the basic concepts associated with Monte Carlo simulation."

This book is an up-to-date survey of the major optical characterization techniques for thin solid films. Emphasis is placed on practicability of the various approaches. Relevant fundamentals are briefly reviewed before demonstrating the application of these techniques to practically relevant research and development topics. The book is written by international top experts, all of whom are involved in industrial research and development projects.

Large computational resources are of ever increasing importance for the simulation of semiconductor processes, devices and integrated circuits. The Workshop on Computational Electronics was intended to be a forum for the dis cussion of the state-of-the-art of device simulation. Three major research areas were covered: conventional simulations, based on the drift-diffusion and the hydrodynamic models; Monte Carlo methods and other techniques for the solution of the Boltzmann transport equation; and computational approaches to quantum transport which are relevant to novel devices based on quantum interference and resonant tunneling phenomena. Our goal was to bring together researchers from various disciplines that contribute to the advancement of device simulation. These include Computer Sci ence, Electrical Engineering, Applied Physics and Applied Mathematics. The suc cess of this multidisciplinary formula was proven by numerous interactions which took place at the Workshop and during the following three-day Short Course on Computational Electronics. The format of the course, including a number of tutorial lectures, and the large attendance of graduate students, stimulated many discussions and has proven to us once more the importance of cross-fertilization between the different disciplines."

An increasing number of system designers are using ASIP 's rather than ASIC 's to implement their system solutions. Building ASIPs: The Mescal Methodology gives a simple but comprehensive methodology for the design of these application-specific instruction processors (ASIPs).

The key elements of this methodology are:

Judiciously using benchmarking

Inclusively identifying the architectural space

Efficiently describing and evaluating the ASIPs

Comprehensively exploring the design space

Successfully deploying the ASIP

This book includes demonstrations of applications of the methodologies using the Tipi research framework as well as state-of-the-art commercial toolsets from CoWare and Tensilica.

A totally new concept for clean surface processing of Si wafers is introduced in this book. Some fifty distinguished researchers and engineers from the leading Japanese semiconductor companies, such as NEC, Hitachi, Toshiba, Sony and Panasonic as well as from several universities reveal to us for the first time the secrets of these highly productive institutions. They describe the techniques and equipment necessary for the preparation of clean high-quality semiconductor surfaces as a first step in high-yield/high-quality device production. This book thus opens the door to the manufacturing of reliable nanoscale devices and will be extremely useful for every engineer, physicist and technician involved in the production of silicon semiconductor devices.

Design for AT-Speed Test, Diagnosis and Measurement is the first book to offer practical and proven design-for-testability (DFT) solutions to chip and system design engineers, test engineers and product managers at the silicon level as well as at the board and systems levels. Designers will see how the implementation of embedded test enables simplification of silicon debug and system bring-up. Test engineers will determine how embedded test provides a superior level of at-speed test, diagnosis and measurement without exceeding the capabilities of their equipment. Product managers will learn how the time, resources and costs associated with test development, manufacture cost and lifecycle maintenance of their products can be significantly reduced by designing embedded test in the product. A complete design flow and analysis of the impact of embedded test on a design makes this book a must read' before any DFT is attempted.

Reliability of Semiconductor Lasers and Optoelectronic Devices simplifies complex concepts of optoelectronics reliability with approachable introductory chapters and a focus on real-world applications. This book provides a brief look at the fundamentals of laser diodes, introduces reliability qualification, and then presents real-world case studies discussing the principles of reliability and what occurs when these rules are broken. Then this book comprehensively looks at optoelectronics devices and the defects that cause premature failure in them and how to control those defects. Key materials and devices are reviewed including silicon photonics, vertical-cavity surface-emitting lasers (VCSELs), InGaN LEDs and lasers, and AlGaN LEDs, covering the majority of optoelectronic devices that we use in our everyday lives, powering the Internet, telecommunication, solid-state lighting, illuminators, and many other applications. This book features contributions from experts in industry and academia working in these areas and includes numerous practical examples and case studies. This book is suitable for new entrants to the field of optoelectronics working in R&D.

GaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous discussions with his students and associates and from the very atmosphere of the pursuit of excellence which exists in his group. I would like to thank my former and present co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions. My special thanks to Professor Morko.;, for his help, his ideas, and the example set by his pioneering work. Since 1978 I have been working with engineers from Honeywell, Inc.-Drs.

Semiconductor power electronics plays a dominant role due its increased efficiency and high reliability in various domains including the medium and high electrical drives, automotive and aircraft applications, electrical power conversion, etc. Power/HVMOS Devices Compact Modeling will cover very extensive range of topics related to the development and characterization power/high voltage (HV) semiconductor technologies as well as modeling and simulations of the power/HV devices and smart power integrated circuits (ICs). Emphasis is placed on the practical applications of the advanced semiconductor technologies and the device level compact/spice modeling. This book is intended to provide reference information by selected, leading authorities in their domain of expertise. They are representing both academia and industry. All of them have been chosen because of their intimate knowledge of their subjects as well as their ability to present them in an easily understandable manner.

The Second Edition of Quantum Information Processing, Quantum Computing, and Quantum Error Correction: An Engineering Approach presents a self-contained introduction to all aspects of the area, teaching the essentials such as state vectors, operators, density operators, measurements, and dynamics of a quantum system. In additional to the fundamental principles of quantum computation, basic quantum gates, basic quantum algorithms, and quantum information processing, this edition has been brought fully up to date, outlining the latest research trends. These include: Key topics include: Quantum error correction codes (QECCs), including stabilizer codes, Calderbank-Shor-Steane (CSS) codes, quantum low-density parity-check (LDPC) codes, entanglement-assisted QECCs, topological codes, and surface codes Quantum information theory, and quantum key distribution (QKD) Fault-tolerant information processing and fault-tolerant quantum error correction, together with a chapter on quantum machine learning. Both quantum circuits- and measurement-based quantum computational models are described The next part of the book is spent investigating physical realizations of quantum computers, encoders and decoders; including photonic quantum realization, cavity quantum electrodynamics, and ion traps In-depth analysis of the design and realization of a quantum information processing and quantum error correction circuits This fully up-to-date new edition will be of use to engineers, computer scientists, optical engineers, physicists and mathematicians.

This monograph is intended for scientists and TCAD engineers who are interested in physics-based simulation of Si and SiGe devices. The common theoretical background of the drift-diffusion, hydrodynamic, and Monte-Carlo models and their synergy are discussed and it is shown how these models form a consistent hierarchy of simulation tools. The basis of this hierarchy is the full-band Monte-Carlo device model which is discussed in detail, including its numerical and stochastic properties. The drift-diffusion and hydrodynamic models for large-signal, small-signal, and noise analysis are derived from the Boltzmann transport equation in such a way that all transport and noise parameters can be obtained by Monte-Carlo simulations. With this hierarchy of simulation tools the device characteristics of strained Si MOSFETs and SiGe HBTs are analysed and the accuracy of the momentum-based models is assessed by comparison with the Monte-Carlo device simulator.

The rapid evolution and explosive growth of integrated circuit technology have impacted society more than any other technological development of the 20th century. Integrated circuits (ICs) are used universally and the expanding use of IC technology requires more accurate circuit analysis methods and tools, prompting the introduction of computers into the design process. The goal of this book is to build a firm foundation in the use of computer-assisted techniques for IC device and process design. Both practical and analytical viewpoints are stressed to give the reader the background necessary to appreciate CAD tools and to feel comfortable with their use. Technology CAD - Computer Simulation of IC Processes and Devices presents a unified discourse on process and device CAD as interrelated subjects, building on a wide range of experiences and applications of the SUPREM program. Chapter 1 focuses on the motivation for coupled process and device CAD. In Chapter 2 SUPREM III is introduced, and process CAD is discussed in terms of ion-implantation, impurity diffusion, and oxidation models. Chapter 3 introduces the Stanford device analysis program SEDAN III (SEmiconductor Device ANalysis). The next three chapters move into greater detail concerning device operating principles and analysis techniques. Chapter 4 reviews the classical formulation of pn junction theory and uses device analysis (SEDAN) both to evaluate some of the classical assumptions and to investigate the difficult problem of high level injection. Chapter 5 returns to MOS devices, reviews the first-order MOS theory, and introduces some important second-order effects. Chapter 6 considers the bipolar transistor. Chapter 7considers the application of process simulation and device analysis to technology design. The BiCMOS process is selected as a useful design vehicle for two reasons. First, it allows the reader to pull together concepts from the entire book. Second, the inherent nature of BiCMOS technology offers real constraints and hence trade-offs which must be understood and accounted for.

This thesis describes a new approach to the construction of "solar cells." Following nature's example, this approach has the goal to find a biomimetic self-assembling dye, whose aggregates can mimic the natural light-harvesting system of special photosynthetic active bacteria. The thesis investigates methods to control the self-assembly such that suitable dye aggregates are formed with high internal order and size-confinement. The dye aggregates can be implemented into a new type of "solar cells," designed to combine the advantages of "hybrid solar cells" and "solid-state dye-sensitized solar cells" (ss-DSSCs): dye aggregate solar cells (DASCs). This book describes the construction and first tests of a prototype for DASCs on the basis of the investigated dye aggregates. The described approach has the advantage that it will enable to build up a light-harvesting system fully synthetically in large scale in order to realize low-cost, light-weight and environmentally friendly solar cells - a worthwhile goal towards the exploitation of clean energy from sunlight.

This book describes intuitive analog design approaches using digital inverters, providing filter architectures and circuit techniques enabling high performance analog circuit design. The authors provide process, supply voltage and temperature (PVT) variation-tolerant design techniques for inverter based circuits. They also discuss various analog design techniques for lower technology nodes and lower power supply, which can be used for designing high performance systems-on-chip.