The tremendous impact of electronic devices on our lives is the result of continuous improvements of the billions of nanoelectronic components inside integrated circuits (ICs). However, ultra-scaled semiconductor devices require nanometer control of the many parameters essential for their fabrication. Through the years, this created a strong alliance between microscopy techniques and IC manufacturing. This book reviews the latest progress in IC devices, with emphasis on the impact of electrical atomic force microscopy (AFM) techniques for their development. The operation principles of many techniques are introduced, and the associated metrology challenges described. Blending the expertise of industrial specialists and academic researchers, the chapters are dedicated to various AFM methods and their impact on the development of emerging nanoelectronic devices. The goal is to introduce the major electrical AFM methods, following the journey that has seen our lives changed by the advent of ubiquitous nanoelectronics devices, and has extended our capability to sense matter on a scale previously inaccessible.

The last decade has witnessed the discovery of, and dramatic progress in understanding the physics of graphene and related two-dimensional materials. The development of methods for manufacturing and aligning high-quality two-dimensional crystals has facilitated the creation of a new generation of materials: the heterostructures of graphene with hexagonal crystals, in which the graphene electrons acquire new, qualitatively different properties. This thesis provides a comprehensive theoretical framework in which to understand these heterostructures, based on the tight binding model, perturbation theory, group theory and the concept of the moire superlattice (all of which are elucidated). It explains how graphene heterostructures provide new opportunities for tailoring band structure, such as creating additional Dirac points or opening band gaps and how they manifest themselves in transport measurements, optical absorption spectra and the fractal Hofstadter spectra. Also considered are the heterostructures of bilayer graphene and resonant tunneling in aligned graphene/insulator/graphene devices.

Nowadays information technology is based on semiconductor and ferromagnetic materials. Information processing and computation are based on electron charge in semiconductor transistors and integrated circuits, and information is stored on magnetic high-density hard disks based on the physics of the electron spins. Recently, a new branch of physics and nanotechnology, called magneto-electronics, spintronics, or spin electronics, has emerged, which aims at simultaneously exploiting both the charge and the spin of electrons in the same device. A broader goal is to develop new functionality that does not exist separately in a ferromagnet or a semiconductor. The aim of this book is to present new directions in the development of spin electronics in both the basic physics and the technology which will become the foundation of future electronics.

Microcontrollers exist in a wide variety of models with varying structures and numerous application opportunities. Despite this diversity, it is possible to find consistencies in the architecture of most microcontrollers. Microcontrollers: Fundamentals and Applications with PIC focuses on these common elements to describe the fundamentals of microcontroller design and programming. Using clear, concise language and a top-bottom approach, the book describes the parts that make up a microcontroller, how they work, and how they interact with each other. It also explains how to program medium-end PICs using assembler language. Examines analog as well as digital signals This volume describes the structure and resources of general microcontrollers as well as PIC microcontrollers, with a special focus on medium-end devices. The authors discuss memory organization and structure, and the assembler language used for programming medium-end PIC microcontrollers. They also explore how microcontrollers can acquire, process, and generate digital signals, explaining available techniques to deal with parallel input or output, peripherals, resources for real-time use, interrupts, and the specific characteristics of serial data interfaces in PIC microcontrollers. Finally, the book describes the acquisition and generation of analog signals either using resources inside the chip or by connecting peripheral circuits. Provides hands-on clarification Using practical examples and applications to supplement each topic, this volume provides the tools to thoroughly grasp the architecture and programming of microcontrollers. It avoids overly specific details so readers are quickly led toward design implementation. After mastering the material in this text, they will understand how to efficiently use PIC microcontrollers in a design process.

The Verilog Hardware Description Language was first introduced in 1984. Over the 20 year history of Verilog, every Verilog engineer has developed his own personal "bag of tricks" for coding with Verilog. These tricks enable modeling or verifying designs more easily and more accurately. Developing this bag of tricks is often based on years of trial and error. Through experience, engineers learn that one specific coding style works best in some circumstances, while in another situation, a different coding style is best. As with any high-level language, Verilog often provides engineers several ways to accomplish a specific task. Wouldn't it be wonderful if an engineer first learning Verilog could start with another engineer's bag of tricks, without having to go through years of trial and error to decide which style is best for which circumstance? That is where this book becomes an invaluable resource. The book presents dozens of Verilog tricks of the trade on how to best use the Verilog HDL for modeling designs at various level of abstraction, and for writing test benches to verify designs. The book not only shows the correct ways of using Verilog for different situations, it also presents alternate styles, and discusses the pros and cons of these styles.

5. 2. Distinction between thick- and thin-film devices . . . . . . . . . . . . . . . . . . . . 109 5. 3. I-V Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112 5. 3. 1. Threshold voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2 5. 3 . 2. Body effecL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1 8 5. 3. 3. Short-channel effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120 5. 3. 4. Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 24 5. 4. Transconductance and mobility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129 5. 4. 1 Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129 5. 4. 2. Mobility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130 5. 5. Subthreshold slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132 5. 6. Impact ionization and high-field effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 9 5. 6. 1. Kink effecL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 39 5. 6. 2. Hot-electron degradation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143 5. 7. Parasitic bipolar effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145 5. 7. 1. Anomalous subthreshold slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 45 5. 7. 2. Reduced drain breakdown voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 7 5. 8. Accumulation-mode p-channel MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 9 CHAPTER 6 - Other SOl Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 5 9 6. 1. Non-conventional devices adapted from bulk . . . . . . . . . . . . . . . . . . . . . . . . . . . 159 6. 1. 1. COMFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160 6. 1. 2. High-voltage lateral MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 6 1 6. 1. 3. PIN photodiode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162 6. 1. 4. JFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163 6. 2. Novel SOl devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164 6. 2. 1. Lubistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164 6. 2. 2. Bipolar-MOS device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166 6. 2. 3. Double-gate MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 69 6. 2. 4. Bipolar transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 172 6. 2. 5. Optical modulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 74 CHAPTER 7 - The sm MOSFET Operating in a Harsh Environment. . . . . . . . 1 77 7. 1. Radiation environment. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 7 7 7. 1. 1. SEU . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 178 7. 1. 2. Total dose . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180 7. 1. 3. Dose-rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 8 4 7. 2. High-temperature operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 85 7. 2. 1. Leakage currents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

"Fundamentals of Nanoscaled Field Effect Transistors" gives comprehensive coverage of thefundamental physical principles and theory behind nanoscale transistors.The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high- technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.

Until the 1990s, the reduction of the minimum feature sizes used to fabricate in- grated circuits, called "scaling," has highlighted serious advantages as integration density, speed, power consumption, functionality and cost. Direct consequence was the decrease of cost-per-function, so the electronic productivity has largely progressed in this period. Another usually cited trend is the evolution of the in- gration density as expressed by the well-know Moore's Law in 1975: the number of devices per chip doubles every 2 years. This evolution has allowed improving signi?cantly the circuit complexity, offering a great computing power in the case of microprocessor, for example. However, since few years, signi?cant issues appeared such as the increase of the circuit heating, device complexity, variability and dif?culties to improve the integration density. These new trends generate an important growth in development and production costs. Though is it, since 40 years, the evolution of the microelectronics always f- lowed the Moore's law and each dif?culty has found a solution.

This text focuses on techniques for minimizing power dissipation during test application at logic and register-transfer levels of abstraction of the VLSI design flow. It surveys existing techniques and presents several test automation techniques for reducing power in scan-based sequential circuits and BIST data paths.

Electronic structure and physical properties of strongly correlated materials containing elements with partially filled 3d, 4d, 4f and 5f electronic shells is analyzed by Dynamical Mean-Field Theory (DMFT). DMFT is the most universal and effective tool used for the theoretical investigation of electronic states with strong correlation effects. In the present book the basics of the method are given and its application to various material classes is shown. The book is aimed at a broad readership: theoretical physicists and experimentalists studying strongly correlated systems. It also serves as a handbook for students and all those who want to be acquainted with fast developing filed of condensed matter physics.

The goal of putting systems on a chip' has been a difficult challenge that is only recently being met. Since the world is analog', putting systems on a chip requires putting analog interfaces on the same chip as digital processing functions. Since some processing functions are accomplished more efficiently in analog circuitry, chips with a large amount of analog and digital circuitry are being designed. Whether a small amount of analog circuitry is combined with varying amounts of digital circuitry or the other way around, the problem encountered in marrying analog and digital circuitry are the same but with different scope. Some of the most prevalent problems are chip/package capacitive and inductive coupling, ringing on the RLC tuned circuits that form the chip/package power supply rails and off-chip drivers and receivers, coupling between circuits through the chip substrate bulk, and radiated emissions from the chip/package interconnects. To aggravate the problems of designers who have to deal with the complexity of mixed-signal coupling there is a lack of verification techniques to simulate the problem. In addition to considering RLC models for the various chip/package/board level parasitics, mixed-signal circuit designers must also model coupling through the common substrate when simulating ICs to obtain an accurate estimate of coupled noise in their designs. Unfortunately, accurate simulation of substrate coupling has only recently begun to receive attention, and techniques for the same are not widely known. Simulation Techniques and Solutions for Mixed-Signal Coupling in Integrated Circuits addresses two major issues of the mixed-signal coupling problem -- how to simulate it and how to overcome it. It identifies some of the problems that will be encountered, gives examples of actual hardware experiences, offers simulation techniques, and suggests possible solutions. Readers of this book should come away with a clear directive to simulate their design for interactions prior to building the design, versus a build it and see' mentality.

This book brings together the many concepts and discoveries in liquid crystal colloids contributed over the last twenty years and scattered across numerous articles and book chapters. It provides both a historical overview of the development of the field and a clear perspective on the future applications in photonics. The book covers all phenomena observed in liquid crystal colloids with an emphasis on experimental tools and applications of topology in condensed matter, as well as practical micro-photonics applications. It includes a number of spectacular manifestations of new topological phenomena not found or difficult to observe in other systems. Starting from the early works on nematic colloids, it explains the basics of topological defects in ordered media, charge and winding, and the elastic forces between colloidal particles in nematics. Following a detailed description of experimental methods, such as optical tweezing and particle tracking, the book eases the reader into the theoretical part, which deals with elastic deformation of nematic liquid crystals due to inclusions and surface alignment. This is discussed in the context of basic mean field Landau-de Gennes Q-tensor theory, with a brief explanation of the free-energy minimization numerical methods. There then follows an excursion into the topology of complex nematic colloidal structures, colloidal entanglement, knotting and linking. Nematic droplets, shells, handlebodies and chiral topological structures are addressed in separate chapters. The book concludes with an extensive chapter on the photonic properties of nematic dispersions, presenting the concept of integrated soft matter photonics and discussing the concepts of nematic and chiral nematic microlasers, surface-sensitive photonic devices and smectic microfibers. The text is complemented by a large bibliography, explanatory sketches and beautiful micrographs.

Summarizes current recycling processes, challenges, and perspectives. Offers a comprehensive review of current commercialized LIB recycling companies. Showcases an innovative closed-loop hydrometallurgical recycling process to recycle lithium cathode materials. Provides detailed modelling and economic analysis of several hydrometallurgical recycling processes. Features practical cases and data developed by the authors.

This book is mostly concerned on the experimental research of the nonlinear optical characteristics of various media, low- and high-order harmonic generation in different materials, and formation, and nonlinear optical characterization of clusters. We also demonstrate the inter-connection between these areas of nonlinear optics.
Nonlinear optical properties of media such as optical limiting can be applied in various areas of science and technology. To define suitable materials for these applications, one has to carefully analyse the nonlinear optical characteristics of various media, such as the nonlinear refractive indices, coefficients of nonlinear absorption, saturation absorption intensities, etc. Knowing the nonlinear optical parameters of materials is also important for describing the propagation effects, self-interaction of intense laser pulses, and optimisation of various nonlinear optical processes. Among those processes one can admit the importance of the studies of the frequency conversion of coherent laser sources. The area of interest for nonlinear optical characterization of materials is also closely related with new field of nanostructures formation and application during laser-matter interaction.
We show how the nonlinear optical analysis of materials leads to improvement of their high-order nonlinear optical response during the interaction with strong laser fields. Ablation-induced nanoparticles formation is correlated with their applications as efficient sources of coherent short-wavelength photons. From other side, recent achievements of harmonic generation in plasmas are closely related with the knowledge of the properties of materials in the laser plumes. All of these studies are concerned with the low-order nonlinear optical features of various materials. The novelty of the approach developed in present book is related with inter-connection of those studies with each other."

This book discusses future trends and developments in electron device packaging and the opportunities of nano and bio techniques as future solutions. It describes theeffect of nano-sized particles and cell-based approaches for packaging solutions with their diverse requirements. It offers a comprehensive overview of nano particles and nano composites and theirapplication aspackaging functions in electron devices. The importance and challenges of three-dimensional design and computer modeling in nano packaging is discussed; alsoways for implementation are described. Solutions for unconventional packaging solutions for metallizations and functionalized surfaces as well as new packaging technologies with high potential for industrial applications are discussed. The book brings together a comprehensive overview of nano scale components and systems comprising electronic, mechanical and optical structures and serves as important reference for industrial and academic researchers."

Systematic Analysis of Bipolar and MOS Transistors is a self-contained reference that walks you through the logical processes involved in transistor analysis. Linking device and circuit engineering, it shows you how to use device models intelligently, tailor existing models, and develop new ones.

Lanthanides have fascinated scientists for more than two centuries now, and since efficient separation techniques were established roughly 50 years ago, they have increasingly found their way into industrial exploitation and our everyday lives. Numerous applications are based on their unique luminescent properties, which are highlighted in this volume. It presents established knowledge about the photophysical basics, relevant lanthanide probes or materials, and describes instrumentation-related aspects including chemical and physical sensors. The uses of lanthanides in bioanalysis and medicine are outlined, such as assays for in vitro diagnostics and research. All chapters were compiled by renowned scientists with a broad audience in mind, providing both beginners in the field and advanced researchers with comprehensive information on on the given subject.

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This book provides a comprehensive overview of the main electrical technologies for process heating, which tend to be treated separately in specialized books. Individual chapters focus on heat transfer, electromagnetic fields in electro-technologies, arc furnaces, resistance furnaces, direct resistance heating, induction heating, and high-frequency and microwave heating. The author highlights those topics of greatest relevance to a wide-ranging teaching program, and at the same time offer a detailed review of the main applications of the various technologies. The content represents a synthesis of the extensive knowledge and experience that the author has accumulated while researching and teaching at the University of Padua's Engineering Faculty. This text on industrial electroheating technologies is a valuable resource not only for students of industrial, electrical, chemical, and material science engineering, but also for engineers, technicians and others involved in the application of electroheating and energy-efficient industrial processes.

This work provides a comprehensive overview of current InP HBT technology and its applications. Each chapter is written by a world-renowned expert on topics including crystal growth, processing, physics, modelling, and digital and analog circuits.

Call-by-push-value is a programming language paradigm that, surprisingly, breaks down the call-by-value and call-by-name paradigms into simple primitives. This monograph, written for graduate students and researchers, exposes the call-by-push-value structure underlying a remarkable range of semantics, including operational semantics, domains, possible worlds, continuations and games.

This thesis focuses on chalcogenide compound quantum dots with special crystal structures and behaviors in an effort to achieve the synergistic optimization of electrical and thermal transport for high-efficiency thermoelectric materials. The controllability and large-scale synthesis of chalcogenide quantum dots are realized through simple colloid synthesis, and the synergistic optimization of the materials' electrical and thermal transport properties is successfully achieved. Furthermore, the book explores the mechanism involved in the integration of high thermoelectric performance and reversible p-n semiconducting switching in bimetal chalcogenide semiconductors. As such, the thesis will be of interest to university researchers and graduate students in the materials science, chemistry and physics.

Reliability of Semiconductor Lasers and Optoelectronic Devices simplifies complex concepts of optoelectronics reliability with approachable introductory chapters and a focus on real-world applications. This book provides a brief look at the fundamentals of laser diodes, introduces reliability qualification, and then presents real-world case studies discussing the principles of reliability and what occurs when these rules are broken. Then this book comprehensively looks at optoelectronics devices and the defects that cause premature failure in them and how to control those defects. Key materials and devices are reviewed including silicon photonics, vertical-cavity surface-emitting lasers (VCSELs), InGaN LEDs and lasers, and AlGaN LEDs, covering the majority of optoelectronic devices that we use in our everyday lives, powering the Internet, telecommunication, solid-state lighting, illuminators, and many other applications. This book features contributions from experts in industry and academia working in these areas and includes numerous practical examples and case studies. This book is suitable for new entrants to the field of optoelectronics working in R&D.

Xiao-Ming Jiang, Sheng-Ping Guo, Hui-Yi Zeng, Ming-Jian Zhang, Guo-Cong Guo: Large Crystal Growth and New Crystal Exploration of Mid-Infrared Second-Order Nonlinear Optical Materials.- Kechen Wu: Simulation and Design of Infrared Second-Order Nonlinear Optical Materials in Metal Cluster Compounds.- Chaoyang Tu: The Recent Development Of SRS and SRS SF- conversion Laser Crystal.- Hua-Jun Zhao, Xin-Tao Wu, Li-Ming Wu: Exploration of New Second-Order Nonlinear Optical Compounds Containing Main Group Elements.

The AlInGaN and ZnO materials systems have proven to be one of the scientifically and technologically important areas of development over the past 15 years, with applications in UV/visible optoelectronics and in high-power/high-frequency microwave devices. The pace of advances in these areas has been remarkable and the wide band gap community relies on books like the one we are proposing to provide a review and summary of recent progress.