The discovery by J. G. Bednorz and K. A. Mtllier in 1986 that the superconducting state can exist in oxides at temperatures above 30 K stimulated research in the field of superconductivity and opened up a new field of research. Within a few years a large number of cuprate superconductors with transition temperatures well above the boiling point of liquid nitrogen have been found. The possibility of using liquid nitrogen as coolant re-stimulated interest in power applications of supercon ductivity. In this book an overview of the known high-Te superconductors and their physical properties is presented. Aspects related to conductor fabrication and high-current applications are emphasised. The material should be suitable for use in graduate level courses on superconductivity. Researchers in the field may profit from the large number of tables and references describing its status at the end of 1997. An introduction to high-To superconductivity must be based on the fundamental physical principles of normal-state electrical conductivity and the well-known characteristics of conventional superconductors. In Chapter 2 this background is provided. Crystal structures, anisotropic properties and general trends of the critical temperatures of the cuprate superconductors are described in Chapters 3 and 4. The processing of superconductor powders addressed in Chapter 5 affects considerably the current-carrying capacity of high-T. wires. In Chapter 6 several fabrication techniques for superconducting wires are described. In addition, the factors limiting the transport critical currents ofhigh-Te wires are discussed.

3. 1 Techniques of Comminution 35 3. 2 Solid-Solid Reactions 42 3. 2. 1 Mixing and Calcination 42 3. 2. 2 Modem Techniques 45 3. 3 Solution Techniques 46 3. 3. 1 Precipitation and Co-precipitation 46 Forced Hydrolysis 3. 3. 2 49 3. 3. 3 Hydrotbennal Synthesis 51 The Sol-Gel Process 3. 3. 4 53 3. 3. 5 Hydrolysis of Metal-Organics 56 The Emulsion Process 3. 3. 6 56 Solvent Vaporization 3. 4 59 3. 4. 1 Simple Evaporation 59 3. 4. 2 Spray Drying 60 3. 4. 3 Spray Pyrolysis 64 3. 4. 4 Freeze Drying 66 3. 5 Vapour-Phase Techniques 68 3. 5. 1 Vaporization-Condensation 68 3. 5. 2 Vapour-Vapour Reaction 68 3. 5. 3 Vapour-Liquid Reaction 70 3. 5. 4 Vapour-Solid Reaction 71 3. 6 Precursor Decomposition 72 3. 6. 1 Salt Decomposition 72 3. 6. 2 Polymer Pyrolysis 73 4. Synthetic Powders : Options in Preparation 75 4. 0 Introduction 75 4. 1 Single and Multiple Oxide Powders 75 4. 1. 1 Aluminium Oxide 75 4. 1. 2 Zirconium Oxide 85 4. 1. 3 Titanium Oxide 96 4. 1. 4 Magnesium Oxide 99 4. 1. 5 Silicon Dioxide 101 4. 1. 6 Rare Earth Oxides 105 Yttrium Oxide 105 Cerium Oxide 106 4. 1. 7 Zinc Oxide 107 [vi] 4. 1. 8 Mullite 110 4. 1. 9 Magnesium Aluminate Spinel 114 4. 1.

Metal matrix composites are making tangible inroads into the "real" world of engineering. They are used in engineering components such as brake rotors, aircraft parts, combustion engines, and heat sinks for electronic systems. Yet, outside a relatively limited circle of specialists, these materials are mostly unknown. Designers do not as a rule think of using these materials, in part because access to information is difficult as these materials have not really entered engineering handbooks. Metal Matrix Composites in Industry is thus useful to engineers who wish to gain introductory knowledge of these materials and who want to know where "to find" them. Additionally, it provides researchers and academics with a survey of current industrial activity in this area of technology.

This book is a product of the understanding I developed of stress analysis applied to plastics, while at work at L. J. Broutman and Associates (UBA) and as a lecturer in the seminars on this topic co-sponsored by UBA and Society of Plastics Engineers. I believe that by its extent and level of treatment, this book would serve as an easy-to-read desktop reference for professionals, as well as a text book at the junior or senior level in undergraduate programs. The main theme of this book is what to do with computed stress. To approach the theme effectively, I have taken the "stress category ap proach" to stress analysis. Such an approach is being successfully used in the nuclear power field. In plastics, this approach helps in the prediction of long term behavior of structures. To maintain interest I have limited derivations and proofs to a minimum, and provided them, if at all, as flow charts. In this way, I believe that one can see better the connection between the variables, assumptions, and mathematics.

Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials sci entists, processing, device production, device design and ion beam engineers are all involved in this subject. The present monography deals with several aspects of ion implantation. The first chapter covers basic information on the physics of devices together with a brief description of the main trends in the field. The second chapter is devoted to ion im planters, including also high energy apparatus and a description of wafer charging and contaminants. Yield is a quite relevant is sue in the industrial surrounding and must be also discussed in the academic ambient. The slowing down of ions is treated in the third chapter both analytically and by numerical simulation meth ods. Channeling implants are described in some details in view of their relevance at the zero degree implants and of the available industrial parallel beam systems. Damage and its annealing are the key processes in ion implantation. Chapter four and five are dedicated to this extremely important subject.

This monograph presents recent research findings on fracture properties and behavior of the composites, and their damage and cracking process under both quasi-static and impact loading conditions. Theoretical treatment, experimental investigation and numerical simulation aspects of the mechanics of composites, including sandwich structures are included.

This book provides a simplified and practical approach to designing with plastics that funda mentally relates to the load, temperature, time, and environment subjected to a product. It will provide the basic behaviors in what to consider when designing plastic products to meet performance and cost requirements. Important aspects are presented such as understanding the advantages of different shapes and how they influence designs. Information is concise, comprehensive, and practical. Review includes designing with plastics based on material and process behaviors. As de signing with any materials (plastic, steel, aluminum, wood, etc.) it is important to know their behaviors in order to maximize product performance-to-cost efficiency. Examples of many different designed products are reviewed. They range from toys to medical devices to cars to boats to underwater devices to containers to springs to pipes to buildings to aircraft to space craft. The reader's product to be designed can directly or indirectly be related to product design reviews in the book. Important are behaviors associated and interrelated with plastic materials (thermoplastics, thermosets, elastomers, reinforced plastics, etc.) and fabricating processes (extrusion, injec tion molding, blow molding, forming, foaming, rotational molding, etc.). They are presented so that the technical or non-technical reader can readily understand the interrelationships.

The use of diamond for electronic applications is not a new idea. As early as the 1920's diamonds were considered for their use as photoconductive detectors. However limitations in size and control of properties naturally limited the use of diamond to a few specialty applications. With the development of diamond synthesis from the vapor phase has come a more serious interest in developing diamond-based electronic devices. A unique combination of extreme properties makes diamond partiCularly well suited for high speed, high power, and high temperature applications. Vapor phase deposition of diamond allows large area films to be deposited, whose properties can potentially be controlled. Since the process of diamond synthesis was first realized, great progress have been made in understanding the issues important for growing diamond and fabricating electronic devices. The quality of both intrinsic and doped diamond has improved greatly to the point that viable applications are being developed. Our understanding of the properties and limitations has also improved greatly. While a number of excellent references review the general properties of diamond, this volume summarizes the great deal of literature related only to electronic properties and applications of diamond. We concentrate only on diamond; related materials such as diamond-like carbon (DLC) and other wide bandgap semiconductors are not treated here. In the first chapter Profs. C. Y. Fong and B. M. Klein discuss the band structure of single-crystal diamond and its relation to electronic properties.

Knowledge of the refractive indices and absorption coefficients of semiconductors is especially import in the design and analysis of optical and optoelectronic devices. The determination of the optical constants of semiconductors at energies beyond the fundamental absorption edge is also known to be a powerful way of studying the electronic energy-band structures of the semiconductors. The purpose of this book is to give tabulated values and graphical information on the optical constants of the most popular semiconductors over the entire spectral range. This book presents data on the optical constants of crystalline and amorphous semiconductors. A complete set of the optical constants are presented in this book. They are: the complex dielectric constant (E=e.+ieJ, complex refractive index (n*=n+ik), absorption coefficient (a.), and normal-incidence reflectivity (R). The semiconductor materials considered in this book are the group-IV elemental and binary, llI-V, IT-VI, IV-VI binary semiconductors, and their alloys. The reader will fmd the companion book "Optical Properties of Crystalline and Amorphous Semiconductors: Materials and Fundamental Principles" useful since it emphasizes the basic material properties and fundamental prinCiples.

The NATO Advanced Research Workshop on Fundamental Aspects of Inert Gases in Solids, held at Bonas, France from 16-22 September 1990, was the fifth in a series of meetings that have been held in this topic area since 1979. The Consultants' Meeting in that year at Harwell on Rare Gas Behaviour in Metals and Ionic Solids was followed in 1982 by the Jiilich Inter national Symposium on Fundamental Aspects of Helium in Metals. Two smaller meetings have followed-a CECAM organised workshop on Helium Bubbles in Metals was held at Orsay, France in 1986 while in February 1989, a Topical Symposium on Noble Gases in Metals was held in Las Vegas as part of the large TMS/AIME Spring Meeting. As is well known, the dominating feature of inert gas atoms in most solids is their high heat of solution, leading in most situations to an essentially zero solubility and gas-atom precipita tion. In organising the workshop, one particular aim was to target the researchers in the field of inert-gas/solid interactions from three different areas--namely metals, tritides and nuclear fuels-in order to encourage and foster the cross-fertilisation of approaches and ideas. In these three material classes, the behaviour of inert gases in metals has probably been most studied, partly from technological considerations-the effects of helium production via (n, a) reac tions during neutron irradiation are of importance, particularly in a fusion reactor environ ment-and partly from a more fundamental viewpoint."

A broad range of state-of-the-art methods to determine properties of clusters are presented. The experimental setup and underlying physical concepts of these experiments are described.
Furthermore, existing theoretical models to explain the experimental observations are introduced and the possibility to deduce structural information from measurements of dielectric properties is discussed.
Additional case studies are presented in the book to emphasize the possibilities but also drawbacks of the methods.

I first learned of the existence of this book on high-temperature superconduc tivity when I received a copy in the office of one of the co-editors, Prof. V. L. Ginzburg, shortly after publication. I had known of the work on problems and prospects of achieving high-temperature superconductors by the members of the I. E. Tamm Department of Theoretical Physics of the P. N. Lebedev Physical Institute. I was naturally anxious to read and study this volume, which inte grates the work of more than a decade. Lest one think that the contributions contained here are of the nature of a reflective looking backward, two important considerations should be kept in mind. First, achievement of high-Tc superconductivity is very much a current and future goal. Elsewhere, one of the authors has described it in these words: "Yes, high-temperature superconductivity is a dream, but a sufficiently realistic one. " Second, the current physics literature contains reports of new and astounding findings-perhaps some of these will later be recognized as precursors to achieving the "dream.

Kinetic studies have traditionally being extremely useful in characterizing several physical and chemical phenomena in organic, inorganic and metallic systems. It provides valuable qualitative, quantitative and kinetic information on phase transformations, solid state precipitation, crystallization, oxidation and decomposition. Unfortunately, no single reference comprehensively presents nonisothermal kinetic analysis method for the study of complex processes, determining the actual mechanism and kinetic parameters. This book provides a new method for nonisothermal kinetics and its application in heterogeneous solid state processes. In the backdrop of limitations in existing methods, the book presents a brief review of the widely used isothermal and nonisothermal kinetic analysis methods.

This book, "Heat and Mass Transfer in Porous Media," presents a set of new developments in the field of basic and applied research work on the physical and chemical aspects of heat and mass transfer phenomena in a porous medium domain, as well as related material properties and their measurements. The book contents include both theoretical and experimental developments, providing a self-contained major reference that is appealing to both the scientists and the engineers. At the same time, these topics will encounter of a variety of scientific and engineering disciplines, such as chemical, civil, agricultural, mechanical engineering, etc. The book is divided in several chapters that intend to be a short monograph in which the authors summarize the current state of knowledge for benefit of professionals.

Dipolar Recoupling, by Niels Chr. Nielsen, Lasse A. Strasso and Anders B. Nielsen.-

Solid-State NMR Techniques for the Structural Determination of Amyloid Fibrils, by Jerry C. C. Chan.-

Solid-State 19F-NMR of Peptides in Native Membranes, by Katja Koch, Sergii Afonin, Marco Ieronimo, Marina Berditsch and Anne S. Ulrich.-

Probing Quadrupolar Nuclei by Solid-State NMR Spectroscopy: Recent Advances, by Christian Fernandez and Marek Pruski.-

Solid State NMR of Porous Materials Zeolites and Related Materials, by Hubert Koller and Mark Weiss.-

Solid-State NMR of Inorganic Semiconductors, by James P. Yesinowski.-"

Just over 25 years ago the first laser-excited Raman spectrum of any crystal was obtained. In November 1964, Hobden and Russell reported the Raman spectrum of GaP and later, in June 1965, Russell published the Si spectrum. Then, in July 1965, the forerunner of a series of meetings on light scattering in solids was held in Paris. Laser Raman spectroscopy of semiconductors was at the forefront in new developments at this meeting. Similar meetings were held in 1968 (New York), 1971 (Paris) and 1975 (Campinas). Since then, and apart from the multidisciplinary biennial International Conference on Raman Spectroscopy there has been no special forum for experts in light scattering spectroscopy of semiconductors to meet and discuss latest developments. Meanwhile, technological advances in semiconductor growth have given rise to a veritable renaissance in the field of semiconductor physics. Light scattering spectroscopy has played a crucial role in the advancement of this field, providing valuable information about the electronic, vibrational and structural properties both of the host materials, and of heterogeneous composite structures. On entering a new decade, one in which technological advances in lithography promise to open even broader horirons for semiconductor physics, it seemed to us to be an ideal time to reflect on the achievements of the past decade, to be brought up to date on the current state-of-the-art, and to catch some glimpses of where the field might be headed in the 1990s.

In this volume, Prof. Zhang reviews the systematic theoretical studies in his group on the growth mechanisms and properties of silicon quantum dots, nanotubes and nanowires, including: mechanisms of oxide-assisted growth of silicon nanowires, energetic stability of pristine silicon nanowires and nanotubes, thermal stability of hydrogen terminated silicon nanostructures, size-dependent oxidation of hydrogen terminated silicon nanostructures, excited-state relaxation of hydrogen terminated silicon nanodots, and direct-indirect energy band transitions of silicon nanowires and sheets by surface engineering and straining. He also discusses the potential applications of these findings. This book will mainly benefit those members of the scientific and research community working in nanoscience, surface science, nanomaterials and related fields.

In the past few years there has been rapid growth in the activities involving particulate materials because of recognized advantages in manufacturing. This growth is attributed to several factors; i) an increased concern over energy utilization, ii) a desire to better control microstructure in engineermg materials, iii) the need for 1mproved material economy, iv) societal and economic pressures for higher productivity and quality, v) requirements for unique property combinations for high performance applica tions, and vi) a desire for net shape forming. Accordingly, liquid phase sintering has received increased attention as part of the growth in particulate materials processing. As a consequence, the commercial applications for liquid phase sintering are expanding rapidly. This active and expanding interest is not well served by available texts. For this reason I felt it was appropriate to write this book on liquid phase sintering. The technology of liquid phase sintering IS quite old and has been in use in the ceramics industry for many centuries. However, the general perception among materials and manufacturing engineers is that liquid phase sintering is still a novel technique. I believe the diverse technological appli cations outlined in this book will dispel I such impressions. Liquid phase. sintering has great value in fabricating several unique materials to near net shapes and will continue to expand in applications as the fundamental attrib utes are better appreciated. I am personally involved with several uses for liquid phase sintering."

This book provides a profound understanding, which physical processes and mechanisms cause the heat transfer in composite and cellular materials. It shows models for all important classes of composite materials and introduces into the latest advances.

In three parts, the book covers Composite Materials (Part A), Porous and Cellular Materials (Part B) and the appearance of a conjoint solid phase and fluid aggregate (Part C).